Influence of the nanometer thick interface layer to electrical properties of the 10nm doped metal oxide high k dielectrics Conference Paper

abstract

• 2002 IEEE. The 2 nm interface films formed between the 10 nm thin Hf- and Zr-doped tantalum oxide high k films and Si wafer were studied. Physical and chemical properties of the interface layer were investigated with respect to the bulk film preparation conditions. The interface layer properties do not influence the high k film's leakage current but affect the dielectric constant drastically.

name of conference

• Proceedings of the 2nd IEEE Conference on Nanotechnology

authors

• Kuo, Yue

published proceedings

• PROCEEDINGS OF THE 2002 2ND IEEE CONFERENCE ON NANOTECHNOLOGY

author list (cited authors)

• Kuo, Y., Lu, J., Liu, P. C., Daby, F. M., & Tewg, J. Y.

citation count

• 4

complete list of authors

• Kuo, Y||Lu, J||Liu, PC||Daby, FM||Tewg, JY

publication date

• January 2002

publisher

• Institute of Electrical and Electronics Engineers (IEEE)  Publisher

published in

• Proceedings of the ... IEEE Conference on Nanotechnology / co-sponsored by IEEE Robotics and Automation Society (RAS) ... [et al.]. IEEE Conference on Nanotechnology  Journal

keywords

• 40 Engineering
• 4016 Materials Engineering
• 4018 Nanotechnology

Digital Object Identifier (DOI)

• 10.1109/NANO.2002.1032240

International Standard Book Number (ISBN) 10

• 0-7803-7538-6

start page

• 251

end page

• 253

volume

• 2002-January

URL

• http%3A%2F%2Fdx.doi.org%2F10.1109%2Fnano.2002.1032240