Nonvolatile Amorphous Silicon Thin Film Transistor Memories with the a-Si:H Embedded Gate Dielectric Structure
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An a-Si:H TFT memory with an a-Si:H layer embedded in the gate dielectric structure has been studied. Fabrication steps for this floating gate structure include a simple one-pump down PECVD and a two-photomask lithography process. Hysteresis of the transfer characteristic demonstrates the memory function. A steady difference between the threshold voltage of the "write" and "erase" state demonstrates the programmabiliry of the memory. A charge retention time of more than 3600 sees has been shown. This new structure could expand the application of conventional a-Si:H TFTs. copyright The Electrochemical Society.
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