Nonvolatile Amorphous Silicon Thin Film Transistor Memories with the a-Si:H Embedded Gate Dielectric Structure Conference Paper uri icon


  • An a-Si:H TFT memory with an a-Si:H layer embedded in thegate dielectric structure has been studied. Fabrication steps for this floating gate structure include a simple one-pump down PECVD and a two--photo mask lithography process. Hysteresis of the transfer characteristic demonstrates the memory function. A steady difference between the threshold voltage of thewrite and erase state demonstrates the programmability of the memory. A charge retention time of more than 3600 secs has been shown. This new structure could expand the application of conventional a-Si:H TFTs.

published proceedings

  • ECS Transactions

author list (cited authors)

  • Kuo, Y., & Nominanda, H.

citation count

  • 2

complete list of authors

  • Kuo, Yue||Nominanda, Helinda

publication date

  • October 2006