Nonvolatile Amorphous Silicon Thin Film Transistor Memories with the a-Si:H Embedded Gate Dielectric Structure Conference Paper

abstract

• An a-Si:H TFT memory with an a-Si:H layer embedded in thegate dielectric structure has been studied. Fabrication steps for this floating gate structure include a simple one-pump down PECVD and a two--photo mask lithography process. Hysteresis of the transfer characteristic demonstrates the memory function. A steady difference between the threshold voltage of thewrite and erase state demonstrates the programmability of the memory. A charge retention time of more than 3600 secs has been shown. This new structure could expand the application of conventional a-Si:H TFTs.

authors

• Kuo, Yue

published proceedings

• ECS Transactions

author list (cited authors)

• Kuo, Y., & Nominanda, H.

citation count

• 2

complete list of authors

• Kuo, Yue||Nominanda, Helinda

publication date

• October 2006

publisher

• The Electrochemical Society  Publisher

published in

• ECS Transactions  Journal

keywords

• Mental Health

Digital Object Identifier (DOI)

• 10.1149/1.2356371

start page

• 333

end page

• 339

volume

• 3

issue

• 8

URL

• http%3A%2F%2Fdx.doi.org%2F10.1149%2F1.2356371