Nonvolatile Amorphous Silicon Thin Film Transistor Memories with the a-Si:H Embedded Gate Dielectric Structure Conference Paper uri icon

abstract

  • An a-Si:H TFT memory with an a-Si:H layer embedded in the gate dielectric structure has been studied. Fabrication steps for this floating gate structure include a simple one-pump down PECVD and a two-photomask lithography process. Hysteresis of the transfer characteristic demonstrates the memory function. A steady difference between the threshold voltage of the "write" and "erase" state demonstrates the programmabiliry of the memory. A charge retention time of more than 3600 sees has been shown. This new structure could expand the application of conventional a-Si:H TFTs. copyright The Electrochemical Society.

author list (cited authors)

  • Kuo, Y., & Nominanda, H.

citation count

  • 2

publication date

  • December 2019