A novel plasma-based copper dry etching method Academic Article

abstract

• A new copper dry etching method has been discovered and studied. The process is based on an unique HCl plasma-copper reaction that forms a solution soluble copper chloride compound. The physical (e.g., morphology, profile, volume expansion, and anisotropy) and chemical (e.g., reaction mechanism) aspects of the solid-state copper chloride growth mechanism have been delineated. This new process is applicable to the copper interconnection technology for advanced microelectronic and optoelectronic devices and circuits.

authors

• Kuo, Yue

published proceedings

• JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS

author list (cited authors)

• Kuo, Y., & Lee, S.

citation count

• 32

complete list of authors

• Kuo, Y||Lee, S

publication date

• March 2000

publisher

• IOP Publishing  Publisher

keywords

• Copper Dry Etching
• Copper Swelling
• Plasma Etching
• Plasma-copper Reaction

Digital Object Identifier (DOI)

• 10.1143/JJAP.39.L188

start page

• L188

end page

• L190

volume

• 39

issue

• 3AB

URL

• http%3A%2F%2Fdx.doi.org%2F10.1143%2Fjjap.39.l188