Bipolar thin-film transistors and method for forming
Patent
Overview
Overview
abstract
A bipolar junction transistor includes a substrate, a first layer, a second layer, and a third layer. The first layer comprises non-single-crystalline semiconductor material having a first conductivity type deposited on the substrate. The second layer comprises non-single-crystalline semiconductor material having a second conductivity type deposited on at least a portion of the first layer. The third layer comprises non-single-crystalline semiconductor material having a conductivity type different than the second conductivity type deposited on at least a portion of the second layer. The first, second, and third layers form a collector, base, and emitter of the bipolar junction transistor.
