Nanocrystalline MoOx Embedded ZrHfO High-k Memories - Charge Trapping and Retention Characteristics Conference Paper uri icon

abstract

  • The nonvolatile memory properties of metal-oxide-semiconductor memory capacitors containing nanocrystalline MoOx embedded ZrHfO high-k gate dielectric have been investigated. The charge trapping capacity and trapping site were investigated using the capacitance-voltage hysteresis and constant voltage stress methods. The memory functions were mainly based on trapping holes at the MoOx site. The current density-voltage curve results confirmed the above charge trapping mechanism and showed the Coulomb blockade phenomena. More than 50% of trapped charges could be retained for more than 10 years. This is a viable dielectric structure for future nanosize memories. ┬ęThe Electrochemical Society.

author list (cited authors)

  • Liu, X. i., Yang, C., Kuo, Y., & Yuan, T.

citation count

  • 3

publication date

  • April 2012