Forming an interconnect of a semiconductor device
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abstract
Forming an interconnect of a semiconductor device includes defining a recessed structure proximate to an outer surface of a substrate of a semiconductor device. A metal layer is deposited within the recessed structure. A region of the metal layer is exposed to a plasma operable to react with the region of the metal layer. A metal compound layer is formed from the region of the metal layer by reacting the region of the metal layer with the plasma. The metal compound layer is removed from the semiconductor structure to yield a remaining metal layer. An interconnect of the semiconductor device is formed from the remaining metal layer.
