EFFECTS OF INTERFACIAL CHARGES ON DOPED AND UNDOPED HfOx STACK LAYER WITH TIN METAL GATE ELECTRODE FOR NANO-SCALED CMOS GENERATION
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JOURNAL OF NANO- AND ELECTRONIC PHYSICS
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Chatterjee, S., & Kuo, Y.
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Research
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Doped High-k Gate Dielectrics
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Mosfet
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Nanoelectronics
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Oxide-defects
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Work Function
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