A new nonvolatile floating gate memory based on hole trapping and detrapping is demonstrated. Metal-oxide-semiconductor capacitors were fabricated with an embedded nanolayer of crystalline indium-tin-oxide layer (ITO) in the zirconium-doped hafnium oxide high-k insulating layer. Capacitance-voltage measurements show counter-clockwise hysteresis indicating a memory effect by the ITO embedded dielectric layer. Retention measurements further confirm that the cause of the hysteresis is due to injection of holes from the substrate to the ITO layer under the accumulation condition. The injected charges display excellent long-term retention after 5000 seconds.