The floating gate n -channel amorphous-silicon thin-film transistor nonvolatile memory device, which includes an a-Si:H layer embedded in the Si Nx gate dielectric layer, has been prepared and studied. The transistor's hysteresis of transfer characteristic curves has been used to demonstrate its memory function. A steady threshold voltage change between the "0" and "1" states has been achieved. A large charge retention time of >3600 s with the "write" and "erase" gap of 0.5 V has been detected. This kind of device brings additional functions to the a-Si:H thin-film transistors, which can expand its application into various areas. 2006 American Institute of Physics.
