Charge detrapping and dielectric breakdown of nanocrystalline zinc oxide embedded zirconium-doped hafnium oxide high-k dielectrics for nonvolatile memories
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Charge detrapping and dielectric breakdown phenomena of the nanocrystalline zinc oxide embedded zirconium-doped hafnium oxide high- k dielectric have been investigated. Charges were loosely or strongly retained at the nanocrystal sites which were saturated above a certain stress voltage. From the polarity change of the relaxation current, it was confirmed that the high- k part of the dielectric film was broken under a high gate bias voltage condition while the nanocrystals still retained charges. These charges were gradually released. These unique characteristics are important to the performance and reliability of the memory device. © 2010 American Institute of Physics.
author list (cited authors)
Yang, C., Kuo, Y., & Lin, C.