Charge detrapping and dielectric breakdown of nanocrystalline zinc oxide embedded zirconium-doped hafnium oxide high-k dielectrics for nonvolatile memories Academic Article uri icon

abstract

  • Charge detrapping and dielectric breakdown phenomena of the nanocrystalline zinc oxide embedded zirconium-doped hafnium oxide high- k dielectric have been investigated. Charges were loosely or strongly retained at the nanocrystal sites which were saturated above a certain stress voltage. From the polarity change of the relaxation current, it was confirmed that the high- k part of the dielectric film was broken under a high gate bias voltage condition while the nanocrystals still retained charges. These charges were gradually released. These unique characteristics are important to the performance and reliability of the memory device. © 2010 American Institute of Physics.

author list (cited authors)

  • Yang, C., Kuo, Y., & Lin, C.

citation count

  • 12

publication date

  • May 2010