(Invited) A Metal Oxide Antifuse-Diode Device Conference Paper uri icon


  • © 2015 The Electrochemical Society. A new type of high-k dielectric based device that has both antifuse and diode functions is reported. The device has a large "programmed" to "unprogrammed" leakage current ratio suitable for "one-time programmed" memory operation. It can limit the current flow direction, which is good for switching purpose. This metal-resistor-semiconductor device has the "gray-scale" capability similar to that of the MOSFET. The operation principle and parameters influencing the device performer have been discussed. There are many possible applications of this new type of device.

author list (cited authors)

  • Kuo, Y.

citation count

  • 3

publication date

  • October 2015