Micro light emitting device prepared from sputter deposited thin hafnium oxide film
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Micro light emitting devices made of the sputter deposited thin hafnium oxide on a p-type silicon wafer have been fabricated and investigated. The emission spectrum covers the visible to near IR wavelength range. The light intensity is affected by the sample's post deposition annealing temperature and the applied voltage. Light was emitted due to excitation of conductive paths formed from the breakdown of local weak spots. The long lifetime of the device, e.g., >1000 h continuously operated at atmosphere, is due to the isolation of the dielectric embedded conductive paths from the air. This kind of device can be applied to many products. 2013 Elsevier Ltd. All rights reserved.
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