Temperature Effects on Charge Storage and Transfer of Nanocrystalline CdSe Embedded Zr-Doped HfO2 MOS Memory Device
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The Author(s) 2016. Published by ECS. The influence of temperature on the charge storage and transfer characteristics of the nanocrystalline CdSe embedded Zr-doped HfO2 high- dielectric on the p-type Si wafer has been studied. With the increase of temperature, the hole-trapping capacity is increased but the electron-trapping follows the opposite trend, which results in a small reduction of the memory window. From the frequency dispersion measurement result, at high temperatures, holes are loosely trapped at the nanocrystal/high- interface and electrons are mainly trapped in the bulk nanocrystal. The high temperature induces a larger leakage current because it enhances the charge supply and transfer in the high- stack. At the low applied voltage, the charge transfer follows the Schottky emission mechanism. In the high, positive gate voltage region, charges are transferred following the Poole-Frenkel mechanism at the low temperature and the Fowler-Nordheim mechanism at the high temperature. The temperature has little effect on the sample's leakage current-gate voltage hysteresis due to the large charge trapping capability. In summary, temperature is an important factor in the operation of the nanocrystals embedded high- memory device because it affects the charge storage and transfer mechanisms.
