Hafnium-doped tantalum oxide high k dielectrics Conference Paper

abstract

• Material and electrical properties of Hf doped TaO x oxide thin films were studied in this work. Hf doping effects on dielectric constant, flat-band voltage shift, leakage current density and formation of the interface layer have been investigated at various doping concentrations. The lightly Hf-doped TaO x films exhibited an improved dielectric constant and dielectric strength. Thin interface layers were observed in moderately and heavily Hf doped TaO x films.

authors

• Kuo, Yue

published proceedings

• PHYSICS AND TECHNOLOGY OF HIGH-K GATE DIELECTRICS I

author list (cited authors)

• Lu, J., Tewg, J. Y., Kuo, Y., & Liu, P. C.

complete list of authors

• Lu, J||Tewg, JY||Kuo, Y||Liu, PC

publication date

• December 2003

published in

• n0275-0171ISSN  Journal

International Standard Book Number (ISBN) 10

• 1-56677-395-4

start page

• 105

end page

• 110

volume

• 2002

issue

• 28