Hafnium-doped tantalum oxide high k dielectrics Conference Paper uri icon

abstract

  • Material and electrical properties of Hf doped TaO x oxide thin films were studied in this work. Hf doping effects on dielectric constant, flat-band voltage shift, leakage current density and formation of the interface layer have been investigated at various doping concentrations. The lightly Hf-doped TaO x films exhibited an improved dielectric constant and dielectric strength. Thin interface layers were observed in moderately and heavily Hf doped TaO x films.

author list (cited authors)

  • Lu, J., Tewg, J. Y., Kuo, Y., & Liu, P. C.

publication date

  • December 2003