Mixed oxides as high-k gate dielectric films Conference Paper

abstract

• Mixed oxides have become popular high-k gate dielectrics in recent years because they can break thermodynamic limits of the conventional metal oxide material. The addition of a third element into a metal oxide changes its bulk and interfacial layer structures and properties, and therefore, electrical characteristics. In this paper, the author reviews material and electrical properties of mixed oxide high-k materials and discusses possible causes. Copyright The Electrochemical Society.

authors

• Kuo, Yue

published proceedings

• ECS Transactions

author list (cited authors)

• Kuo, Y.

complete list of authors

• Kuo, Y

publication date

• July 2006

published in

• ECS Transactions  Journal

International Standard Book Number (ISBN) 10

• 1566774381

International Standard Book Number (ISBN) 13

• 9781566774383

start page

• 13

end page

• 22

volume

• 2

issue

• 1