Mixed oxides as high-k gate dielectric films Conference Paper uri icon


  • Mixed oxides have become popular high-k gate dielectrics in recent years because they can break thermodynamic limits of the conventional metal oxide material. The addition of a third element into a metal oxide changes its bulk and interfacial layer structures and properties, and therefore, electrical characteristics. In this paper, the author reviews material and electrical properties of mixed oxide high-k materials and discusses possible causes. Copyright The Electrochemical Society.

published proceedings

  • ECS Transactions

author list (cited authors)

  • Kuo, Y.

complete list of authors

  • Kuo, Y

publication date

  • July 2006