Plasma oxidation as an effective method in etching copper interconnect lines at room-temperature Academic Article

abstract

• Abstract The oxygen plasma-copper reaction has been proved effective in preparing copper fine patterns at room temperature. The oxidized copper film is composed of crystalline CuO and Cu2O with a granular structure due to the volume expansion. The time-dependent oxide growth progresses in three stages with different mechanisms: penetration of native oxide, oxidation kinetics, and transportation of precursors through the porous oxide layer. The vertical copper profile is obtained from the anisotropic oxidation due to the acceleration of oxygen ions from the cathode self-bias voltage. The plasma oxidation etching method is applicable to a wide range of nano and microelectronics.

authors

• Kuo, Yue

published proceedings

• JAPANESE JOURNAL OF APPLIED PHYSICS

author list (cited authors)

• Kuo, Y., & Su, J. Q.

citation count

• 1

complete list of authors

• Kuo, Yue||Su, Jia Quan

publication date

• March 2022

publisher

• IOP Publishing  Publisher

published in

• Japanese Journal of Applied Physics  Journal

keywords

• Copper Interconnect
• Plasma Etch
• Plasma Etch Of Copper

Digital Object Identifier (DOI)

• 10.35848/1347-4065/ac4f95

start page

• 030902

end page

• 030902

volume

• 61

issue

• 3

URL

• http://dx.doi.org/10.35848/1347-4065/ac4f95