Stress testing and characterization of high-k dielectric thin films Conference Paper uri icon

abstract

  • 2003 IEEE. While TaOx, HfOx, Hf-doped TaOx and Zr-doped TaOx thin films exhibit promise as potential candidates for use as gate dielectric, their reliability is barely understood. Therefore, as an initial step in the investigation of their reliability, stress tests are conducted in this experimental study to characterize high-k thin films. In humidity stress tests, analyses of variance are performed on the measure defined in I-V and C-V curves to examine the significance of the stress effects. The high-k films are compared with SiO2 in terms of leakage current and relaxation current. By studying the dielectric relaxation and analyzing the transient current, the breakdown mode of the tested high-k films is identified, and a sensitive method of breakdown detection is proposed.

name of conference

  • 2003 IEEE International Integrated Reliability Workshop Final Report

published proceedings

  • IEEE International Integrated Reliability Workshop Final Report, 2003

author list (cited authors)

  • Luo, W., Sunardi, D., Kuo, Y., & Kuo, W.

citation count

  • 5

complete list of authors

  • Luo, W||Sunardi, D||Kuo, Y||Kuo, W

publication date

  • January 2003

publisher