Geometrical Layout Effect on Light Intensity Distribution in SSI-LED Academic Article

abstract

• Physics-based analytical calculations are performed to simulate light intensity distributions from solid-state incandescent light emitting devices. The geometrical layout of the nano-resistors formed in the SSI-LED affects the local light intensity distribution at higher magnifications. Different geometrical layout configurations of light emitting nano-resistors are considered linear, triangular, square, and face-centered square. The simulated distribution could be correlated to the experimentally observed light dot patterns at higher magnifications.

authors

• Kuo, Yue

published proceedings

• ECS Transactions

author list (cited authors)

• Shukla, A., & Kuo, Y.

citation count

• 2

publication date

• May 2021

publisher

• The Electrochemical Society  Publisher

keywords

• 40 Engineering
• 4009 Electronics, Sensors And Digital Hardware

Digital Object Identifier (DOI)

• 10.1149/10202.0159ecst

start page

• 159

end page

• 164

volume

• 102

issue

• 2

URL

• http://dx.doi.org/10.1149/10202.0159ecst