CHARACTERIZATION OF INDIUM TIN OXIDE AND REACTIVE ION ETCHED INDIUM TIN OXIDE SURFACES Conference Paper

abstract

• ITO films, both before and after annealing, were characterized with various methods. The changes in film characteristics are discussed. RIE etching mechanisms for the unannealed ITO films in three reactive gases (CF2Cl2, CF3Cl, and CF4) and two diluent gases (N2 and Ar) were delineated by analyzing and comparing the surface ESCA data with the process results. For undiluted gases, indium is the major component left on the surface, and each gas has its own etch preference for different components. The addition of a diluent into the plasma may change the surface composition as well as the etching mechanisms. To increase the whole film etch rate, each component has to be etched off effectively.

authors

• Kuo, Yue

published proceedings

• JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS

author list (cited authors)

• KUO, Y.

citation count

• 16

complete list of authors

• KUO, Y

publication date

• October 1990

publisher

• IOP Publishing  Publisher

published in

• Japanese Journal of Applied Physics  Journal

keywords

• 40 Engineering

Digital Object Identifier (DOI)

• 10.1143/JJAP.29.2243

start page

• 2243

end page

• 2246

volume

• 29

issue

• 10

URL

• http://dx.doi.org/10.1143/jjap.29.2243