Embedding of Nanocrystalline Ruthenium in ZrHfO High-k Film for Nonvolatile Memories
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MOS nonvolatile memory capacitors made of the nanocrystalline RuO x embedded Zr-doped HfO2 high-k gate dielectric film were fabricated and characterized. The as-deposited Ru film changed into discrete nanocrystalline RuOx with a sheet density of 8×1011 cm-2 after the 950°C thermal annealing. The Coulomb blockade effect was observed. The device showed a large memory window, i.e., 1.72V in the gate sweep range of ±9V. The memory function was mainly contributed by the hole trapping mechanism, especially below the +6V gate bias region. © The Electrochemical Society.
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