Embedding of Nanocrystalline Ruthenium in ZrHfO High-k Film for Nonvolatile Memories Conference Paper uri icon


  • MOS nonvolatile memory capacitors made of the nanocrystalline RuOx embedded Zr-doped HfO2 high-k gate dielectric film were fabricated and characterized. The as-deposited Ru film changed into discrete nanocrystalline RuOx with a sheet density of 8E11cm-2 after the 950oC thermal annealing. The Coulomb blockade effect was observed. The device showed a large memory window, i.e., 1.72V in the gate sweep range of {plus minus}9V. The memory function was mainly contributed by the hole trapping mechanism, especially below the {plus minus}6V gate bias region.

published proceedings

  • ECS Transactions

author list (cited authors)

  • Lin, C., & Kuo, Y.

citation count

  • 6

complete list of authors

  • Lin, Chen-Han||Kuo, Yue

publication date

  • October 2008