Nanocrystalline zinc-oxide-embedded zirconium-doped hafnium oxide for nonvolatile memories
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abstract
Memory devices containing nanocrystalline ZnO -embedded Zr-doped HfO2 high- k dielectric film have been prepared and characterized. The memory effect was manifested by the large counterclockwise capacitance-voltage hysteresis, e.g., 1.22 at 6 V gate bias, and negative differential resistance region in the positive bias current-voltage range. The maximum trapped charge density of 6.43 1012 cm-2 was obtained after -9+9-9 V sweep voltage range. The memory effects were mainly caused by electron trapping at low bias voltage. A large memory operation window, e.g., 0.90 V, with a long charge-retention time, e.g., >36,000 s, was achieved under the proper gate-stress voltage. It is a viable dielectric for future nanosize metal-oxide-semiconductor field-effect transistors and capacitors. 2008 The Electrochemical Society.
