A Solid State Thin Film Incandescent Light Emitting Device Conference Paper

abstract

• 2014 IEEE. A new type of solid state thin film white light emitting device has been studied. Light is emitted due to thermal excitation of the nano size conductive paths formed after the dielectric breakdown of the amorphous metal oxide thin film deposited on a silicon wafer. The mechanism of light emission, optical characteristics, reliability, driving methods, and efficiency are discussed. The complete device is made of the IC compatible materials and process.

name of conference

• 2014 IEEE International Electron Devices Meeting

authors

• Kuo, Yue

published proceedings

• 2014 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM)

author list (cited authors)

• Kuo, Y.

citation count

• 2

complete list of authors

• Kuo, Yue

publication date

• December 2014

publisher

• Institute of Electrical and Electronics Engineers (IEEE)  Publisher

published in

• n2380-9248ISSN  Journal

Digital Object Identifier (DOI)

• 10.1109/iedm.2014.7046985

start page

• 4.7.1

end page

• 4.7.4

volume

• 2015-February

issue

• February

URL

• http%3A%2F%2Fdx.doi.org%2F10.1109%2Fiedm.2014.7046985