Nanocrystalline Silicon Embedded Zirconium-Doped Hafnium Oxide High- k Memory Device Academic Article uri icon

abstract

  • Memory devices containing the nanocrystalline Si embedded Zr-doped HfO 2 high-k dielectric film, which have many advantages over the conventional non-doped high-k films, have been prepared and characterized. The memory effect was manifested by the large counterclockwise capacitance-voltage hysteresis, e.g., 2.98V, and negative differential resistance region in the positive bias current-voltage characteristics. A large memory operation window, e.g., 0.72 V, with a long charge retention time, e.g., > 10,000 s, was achieved under the proper gate stress voltages. It is a viable dielectric for future nano-size metal oxide semiconductor field effect transistors and capacitors. © 2006 The Japan Society of Applied Physics.

altmetric score

  • 3

author list (cited authors)

  • Lu, J., Kuo, Y., Yan, J., & Lin, C.

citation count

  • 22

publication date

  • August 2006