Nanocrystalline Silicon Embedded Zirconium-Doped Hafnium Oxide High-kMemory Device
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Memory devices containing the nanocrystalline Si embedded Zr-doped HfO 2 high-k dielectric film, which have many advantages over the conventional non-doped high-k films, have been prepared and characterized. The memory effect was manifested by the large counterclockwise capacitance-voltage hysteresis, e.g., 2.98V, and negative differential resistance region in the positive bias current-voltage characteristics. A large memory operation window, e.g., 0.72 V, with a long charge retention time, e.g., > 10,000 s, was achieved under the proper gate stress voltages. It is a viable dielectric for future nano-size metal oxide semiconductor field effect transistors and capacitors. 2006 The Japan Society of Applied Physics.
Japanese Journal of Applied Physics
author list (cited authors)
Lu, J., Kuo, Y., Yan, J., & Lin, C.
complete list of authors
Lu, Jiang||Kuo, Yue||Yan, Jiong||Lin, Chen-Han