Nonvolatile Memory Characteristics of Nanocrystalline Molybdenum Oxide Embedded High-k Film - Device Performance and Light Wavelength Effects Conference Paper

abstract

• ABSTRACTThe nanocrystalline molybdenum oxide embedded Zr-doped HfO2high-knonvolatile memory device has been fabricated using the one pumpdown sputtering process and a rapid thermal annealing step. The majority embedded molybdenum existed in the MoO3nanocrystal form but a small amount of metallic molybdenum was also detected. The memory function of this device was based on the hole trapping-and-detrapping mechanism. The embedded nanocrystals retained charges after the breakdown of the high-kstack. The charge storage capacity was influenced by light exposure, especially the wavelength. The silicon/high-kinterface was also affected by the exposed light. This study provided an insight of the function of the embedded nanocrystals and the light effects on the device.

authors

• Kuo, Yue

published proceedings

• MRS Advances

author list (cited authors)

• Kuo, Y., Liu, X. i., Yang, C., & Lin, C.

citation count

• 3

complete list of authors

• Kuo, Yue||Liu, Xi||Yang, Chia-Han||Lin, Chi-Chou

publication date

• December 2012

publisher

• Springer Nature  Publisher

published in

• MRS Online Proceedings Library  Journal

keywords

• 40 Engineering
• 4016 Materials Engineering
• 4018 Nanotechnology

Digital Object Identifier (DOI)

• 10.1557/opl.2012.1018

International Standard Book Number (ISBN) 13

• 9781605114071

start page

• mrss12-1430-e01-10

end page

• 27

volume

• 1430

URL

• http%3A%2F%2Fdx.doi.org%2F10.1557%2Fopl.2012.1018