Nonvolatile Memory Characteristics of Nanocrystalline Molybdenum Oxide Embedded High-k Film - Device Performance and Light Wavelength Effects Conference Paper uri icon


  • ABSTRACTThe nanocrystalline molybdenum oxide embedded Zr-doped HfO2high-knonvolatile memory device has been fabricated using the one pumpdown sputtering process and a rapid thermal annealing step. The majority embedded molybdenum existed in the MoO3nanocrystal form but a small amount of metallic molybdenum was also detected. The memory function of this device was based on the hole trapping-and-detrapping mechanism. The embedded nanocrystals retained charges after the breakdown of the high-kstack. The charge storage capacity was influenced by light exposure, especially the wavelength. The silicon/high-kinterface was also affected by the exposed light. This study provided an insight of the function of the embedded nanocrystals and the light effects on the device.

published proceedings

  • MRS Advances

author list (cited authors)

  • Kuo, Y., Liu, X. i., Yang, C., & Lin, C.

citation count

  • 3

complete list of authors

  • Kuo, Yue||Liu, Xi||Yang, Chia-Han||Lin, Chi-Chou

publication date

  • December 2012