The nanocrystalline molybdenum oxide embedded Zr-doped HfO2high-
knonvolatile memory device has been fabricated using the one pumpdown sputtering process and a rapid thermal annealing step. The majority embedded molybdenum existed in the MoO3nanocrystal form but a small amount of metallic molybdenum was also detected. The memory function of this device was based on the hole trapping-and-detrapping mechanism. The embedded nanocrystals retained charges after the breakdown of the high- kstack. The charge storage capacity was influenced by light exposure, especially the wavelength. The silicon/high- kinterface was also affected by the exposed light. This study provided an insight of the function of the embedded nanocrystals and the light effects on the device.