Nonvolatile Memory Characteristics of Nanocrystalline Molybdenum Oxide Embedded High-k Film - Device Performance and Light Wavelength Effects Conference Paper uri icon

abstract

  • The nanocrystalline molybdenum oxide embedded Zr-doped HfO2 high-k nonvolatile memory device has been fabricated using the one pumpdown sputtering process and a rapid thermal annealing step. The majority embedded molybdenum existed in the MoO3 nanocrystal form but a small amount of metallic molybdenum was also detected. The memory function of this device was based on the hole trapping-and-detrapping mechanism. The embedded nanocrystals retained charges after the breakdown of the high-k stack. The charge storage capacity was influenced by light exposure, especially the wavelength. The silicon/high-k interface was also affected by the exposed light. This study provided an insight of the function of the embedded nanocrystals and the light effects on the device. © 2012 Materials Research Society.

author list (cited authors)

  • Kuo, Y., Liu, X. i., Yang, C., & Lin, C.

citation count

  • 3

publication date

  • May 2012