White light emission from the amorphous Zr-doped HfO2 film with or without an embedded nanocrystalline CdSe layer on a p-type silicon wafers has been observed and investigated. The light intensity is enhanced by the inclusion of the nanocrystalline CdSe layer and the increase of the magnitude of the applied gate voltage. The former is due to the increase of the defect density to cause the increase of the number of the leakage current paths. The latter is due to the increase of energy to excite the conductive path. The broad band emission spectra from both samples cover the visible and near IR wavelength range with a high color rendering index of 98.4. The light emission process can last for more than 1,000 hours continuously with very slight change of the spectrum or the intensity in air without a passivation layer.