Influence of Ru Dopant on the Dielectric Properties of Zr-doped HfO2 High-k Thin Film Conference Paper uri icon

abstract

  • The ruthenium (Ru) modified Zr-doped HfOx high-k thin films were prepared and studied. Electrical properties of the ZrHfOx film were greatly influenced by doping with Ru or embedding RuOx in the structure, e.g., (1) lowering equivalent oxide thickness (EOT) from 1.79nm (ZrHfOx film) to 1.19nm and 1.21nm, respectively, and (2) decreasing oxide trapped charge and fixed charge density. The high-k/Si interface composition was changed by the added Ru. The RuOx-embedded film has a much smaller leakage current density than that of the thermally grown SiO 2 with the same EOT and better interface quality than the Ru-doped film. © The Electrochemical Society.

author list (cited authors)

  • Lin, C., Kuo, Y., & Lu, J.

citation count

  • 1

publication date

  • December 2019