Influence of Ru Dopant on the Dielectric Properties of Zr-doped HfO2 High-k Thin Film Conference Paper

abstract

• The ruthenium (Ru) modified Zr-doped HfOx high-k thin films were prepared and studied. Electrical properties of the ZrHfOx film were greatly influenced by doping with Ru or embedding RuOx in the structure, e.g., (1) lowering equivalent oxide thickness (EOT) from 1.79nm (ZrHfOx film) to 1.19nm and 1.21nm, respectively, and (2) decreasing oxide trapped charge and fixed charge density. The high-k/Si interface composition was changed by the added Ru. The RuOx-embedded film has a much smaller leakage current density than that of the thermally grown SiO2 with the same EOT and better interface quality than the Ru- doped film.

authors

• Kuo, Yue

published proceedings

• ECS Transactions

author list (cited authors)

• Lin, C., Kuo, Y., & Lu, J.

citation count

• 1

complete list of authors

• Lin, Chen-Han||Kuo, Yue||Lu, Jiang

publication date

• April 2007

publisher

• The Electrochemical Society  Publisher

published in

• ECS Transactions  Journal

Digital Object Identifier (DOI)

• 10.1149/1.2727395

International Standard Book Number (ISBN) 13

• 9781566775502

start page

• 121

end page

• 127

volume

• 6

issue

• 1

URL

• http%3A%2F%2Fdx.doi.org%2F10.1149%2F1.2727395