Effects of post metallization annealing on the electrical reliability of ultra-thin HfO(2) films with MoN and WN gate electrodes Conference Paper

name of conference

• 2005 IEEE International Reliability Physics Symposium, 2005. Proceedings. 43rd Annual.

authors

• Kuo, Yue

published proceedings

• 2005 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS - 43RD ANNUAL

author list (cited authors)

• Chatterjee, S., Kuo, Y., Lu, J., Tewg, J. Y., & Majhi, P.

citation count

• 1

complete list of authors

• Chatterjee, S||Kuo, Y||Lu, J||Tewg, JY||Majhi, P

publication date

• January 2005

publisher

• Institute of Electrical and Electronics Engineers (IEEE)  Publisher

published in

• IEEE International Reliability Physics Symposium Proceedings  Journal

keywords

• 40 Engineering
• 4016 Materials Engineering
• 4018 Nanotechnology
• 51 Physical Sciences

Digital Object Identifier (DOI)

• 10.1109/RELPHY.2005.1493175

International Standard Book Number (ISBN) 10

• 0-7803-8803-8

start page

• 626

end page

• 627

URL

• http%3A%2F%2Fdx.doi.org%2F10.1109%2Frelphy.2005.1493175