Dielectric breakdown and charge trapping of ultrathin ZrHfO/SiON high-k gate stacks Academic Article

abstract

• One- and two-step breakdown phenomena were observed on the zirconium-doped hafnium oxide (ZrHfO) high-k dielectric films with equivalent oxide thicknesses 1.8 and 2.5 nm, respectively. The difference in the breakdown sequence was attributed to the bulk high-k layer thickness and interface layer structure. The trap generation and charge trapping in the high-fc stack was investigated using a new stress-relax method through analyzing the relaxation current change. The results showed that new traps were only created under the high bias condition and the density could be comparable to or even larger than that of the preexisted traps. 2008 The Japan Society of Applied Physics.

authors

• Kuo, Yue

published proceedings

• JAPANESE JOURNAL OF APPLIED PHYSICS

author list (cited authors)

• Wan, R., Yan, J., Kuo, Y., & Lu, J.

citation count

• 9

complete list of authors

• Wan, Rui||Yan, Jiong||Kuo, Yue||Lu, Jiang

publication date

• March 2008

publisher

• IOP Publishing  Publisher

published in

• Japanese Journal of Applied Physics  Journal

keywords

• Charge Trapping
• Dielectric Breakdown
• High-k Dielectrics
• Interface Layer

Digital Object Identifier (DOI)

• 10.1143/JJAP.47.1639

start page

• 1639

end page

• 1641

volume

• 47

issue

• 3

URL

• http%3A%2F%2Fdx.doi.org%2F10.1143%2Fjjap.47.1639