The p-channel a-Si : H thin film transistor with plasma etched copper electrodes
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P-channel thin film transistors (TFTs) with a copper (Cu) gate, source, and drain electrodes, prepared by a novel plasma etching process, have been fabricated and studied. The p-channel TFT characteristics are similar to those of the p-channel TFT with Mo electrodes. The influence of the channel length on the TFT characteristics, such as mobility, threshold voltage, and on-off current ratio, was examined. In spite of its low mobility, good device characteristics, such as ohmic contacts, were obtained. Most of the TFT characteristics, except the threshold voltage, were not affected by an extended high-temperature annealing step. The increase of the threshold voltage was probably due to the lack of a diffusion barrier between the gate Cu and the gate SiN x layer.
author list (cited authors)
Nominanda, H., Liu, G. J., Lee, H. H., & Kuo, Y.