Failure Mechanism of Nano-Resistor Devices Conference Paper

abstract

• The Electrochemical Society. The failure mechanism of the nano-resistor device formed from the breakdown of the Zr-doped HfO2 high-k dielectric MOS structure has been studied using the accelerated high-voltage stress method. The failure process proceeded from the edge toward the center of the device, which was contributed by the uneven temperature distribution from the difference of the local leakage currents. With the increase of the stress time, the original flat ITO surface showed bumps of which the size increased with the stress time. Eventually, the local region became black because of damages of ITO and related materials. The understanding of the failure mechanism of the nano-resistor device is very important to its reliability and applications.

authors

• Kuo, Yue

published proceedings

• EMERGING MATERIALS FOR POST CMOS DEVICES/SENSING AND APPLICATIONS 8

author list (cited authors)

• Zhang, S., & Kuo, Y.

citation count

• 5

complete list of authors

• Zhang, Shumao||Kuo, Yue

publication date

• April 2017

publisher

• The Electrochemical Society  Publisher

published in

• ECS Transactions  Journal

Digital Object Identifier (DOI)

• 10.1149/07702.0079ecst

International Standard Book Number (ISBN) 13

• 9781607685395

start page

• 79

end page

• 83

volume

• 77

issue

• 2

URL

• http://dx.doi.org/10.1149/07702.0079ecst