Charge trapping of ultra-thin ZrHfOx/RuOx/ZrHfOx high-k stacks Conference Paper uri icon

abstract

  • Charge trapping in ultra-thin ZrHfOx/RuOx/ZrHfO x high-k stacks has been investigated. ZrHfOx/RuO x/ZrHfOx tri-layer may be a more proper high-k dielectric than ZrHfOx, because of its smaller equivalent oxide thickness, leakage current and relaxation current. Positive charges trapped in both bulk and interface contribute to the interface state generation and Vfb shift when electrons are injected from the gate under a negative gate bias condition; meanwhile no noticeable electron or neutral traps created by anode hole degrade much the performance of TiN/ ZrHfOx/RuO x/ZrHfOx/p-Si. It was also observed that a negligible number of defects are generated until the gate bias stress increases to a certain level. The stress-induced trap generation is not reversible and the number of these newly generated traps could be comparable to or even larger than that of the pre-existed ones. ©2007 IEEE.

author list (cited authors)

  • Wan, R., Lin, C., Kuo, Y., & Kuo, W.

citation count

  • 0

publication date

  • October 2007

publisher