The influence of the red and green LED light exposure on the memory function of the nanocrystalline MoOx embedded ZrHfO high-
kgate dielectric has been investigated. Since the performance of the device is mainly dependent on the hole trapping and detrapping mechanisms, the light exposure affects the hole generation, transfer, and storage to and in the dielectric structure. Both the charge storage capacity and the leakage current were increased from the light exposure. The Coulomb blockade phenomenon in the leakage current density vs. gate voltage curve disappears under the light exposure condition. The light exposure effect is potentially important for practical application of the device.