Suppression of crystallization of tantalum oxide thin film by doping with zirconium uri icon

abstract

  • Metal oxide high dielectric constant materials suffer from crystallization after a high-temperature annealing step, which hinders their applications in future metal oxide semiconductor devices. We observed that when the tantalum oxide thin film was doped with zirconium, its amorphous-to-polycrystalline transition temperature was raised by more than 200C. The crystal structure and grain size were affected by the dopant concentration, annealing temperature, and film thickness. The doping method changed the crystallization mechanism of the film. Therefore, the doping method is effective in improving the high-k dielectric electrical properties. 2004 The Electrochemical Society. All rights reserved.

published proceedings

  • ELECTROCHEMICAL AND SOLID STATE LETTERS

author list (cited authors)

  • Tewg, J. Y., Kuo, Y., & Lu, J.

citation count

  • 38

complete list of authors

  • Tewg, JY||Kuo, Y||Lu, J

publication date

  • January 2005