Anomalous high rate reactive ion etching process for indium tin oxide
Academic Article
Overview
Additional Document Info
View All
Overview
abstract
An anomalous high indium tin oxide etch rate, i.e., 1630 angstroms/min, reactive ion etching condition has been obtained. This process is based on the combination of high temperature, i.e., 250 C, and a mixture of HCl and CH4 gases. Throughout the whole range of the gas composition, the highest etch rate is obtainable in a small CH4 concentration range, e.g., around 40%. The same phenomenon has been observed at different plasma powers. The influence of temperature or power to the etch rate is not obvious unless a threshold temperature or a threshold power is surpassed. The pure HCl plasma etched surface is in liquid form and has a rough topography after solidification. The HCl/40% CH4 etched surface is solid and has a smooth topography. A high etch rate is contributed by near-stoichiometric surface reactions as well as strong ion bombardment.