Material and Electrical Properties of Hole-Trapping Memory Capacitors Composed of nc-ITO Embedded ZrHfO High-k Films Conference Paper

abstract

• The material and electrical properties of MOS memory capacitors composed of single- and dual-layer nc-ITO embedded ZrHfO high-k films have been investigated. The dual-layer nc-ITO embedded sample shows a higher charge trapping density than the single-layer nc-ITO embedded sample does. The formation of an interface layer at the nc-ITO and ZrHfO contact region is confirmed by XPS analysis. The memory function is mainly based on trapping holes at both the bulk and interface of the nc-ITO site. The frequency-dependent C-V and G-V results indicate that parts of holes are loosely trapped at the nc-ITO/ZrHfO interfaces. The hole-trapping and -detrapping phenomena are also confirmed from the J-V measurements.

authors

• Kuo, Yue

published proceedings

• SILICON COMPATIBLE MATERIALS, PROCESSES, AND TECHNOLOGIES FOR ADVANCED INTEGRATED CIRCUITS AND EMERGING APPLICATIONS

author list (cited authors)

• Lin, C., & Kuo, Y.

citation count

• 3

complete list of authors

• Lin, Chen-Han||Kuo, Yue

publication date

• April 2011

publisher

• The Electrochemical Society  Publisher

published in

• ECS Transactions  Journal

keywords

• Biodefense
• Prevention
• Vaccine Related

Digital Object Identifier (DOI)

• 10.1149/1.3568867

International Standard Book Number (ISBN) 13

• 978-1-60768-213-4

start page

• 249

end page

• 255

volume

• 35

issue

• 2

URL

• http%3A%2F%2Fdx.doi.org%2F10.1149%2F1.3568867