Temperature Influence on Nanocrystals Embedded High-k Nonvolatile Memory Characteristics Conference Paper uri icon

abstract

  • The temperature influence on memory functions of the nanocrystalline ZnO embedded Zr-doped HfO2 high-k capacitor was investigated. Both the memory window and the trapped charge density increased with the increase of temperature. The temperature effect on hole trapping was observed at 125°C but not at 25°C or 75°C. The temperature effect on electron trapping was obvious above 25°C. The interface quality is greatly influenced by the temperature, which was detected on the C-V, G-V, and I-V curves. The sample temperature affects the carrier generation and transport mechanisms, which are responsible for the memory function changes.

author list (cited authors)

  • Yang, C., Kuo, Y., Lin, C., & Kuo, W.

citation count

  • 2

publication date

  • December 2019