Temperature Influence on Nanocrystals Embedded High-k Nonvolatile Memory Characteristics Conference Paper uri icon

abstract

  • The temperature influence on memory functions of the nanocrystalline ZnO embedded Zr-doped HfO2 high-k capacitor was investigated. Both the memory window and the trapped charge density increased with the increase of temperature. The temperature effect on hole trapping was observed at 125C but not at 25C or 75C. The temperature effect on electron trapping was obvious above 25C. The interface quality is greatly influenced by the temperature, which was detected on the C-V, G-V, and I-V curves. The sample temperature affects the carrier generation and transport mechanisms, which are responsible for the memory function changes.

published proceedings

  • ADVANCED GATE STACK, SOURCE/DRAIN, AND CHANNEL ENGINEERING FOR SI-BASED CMOS 5: NEW MATERIALS, PROCESSES, AND EQUIPMENT

author list (cited authors)

  • Yang, C., Kuo, Y., Lin, C., & Kuo, W.

citation count

  • 2

complete list of authors

  • Yang, Chia-Han||Kuo, Yue||Lin, Chen-Han||Kuo, Way

publication date

  • May 2009