Nanocrystals Embedded High-k Nonvolatile Memories - Bulk Film and Nanocrystal Material Effects Conference Paper

abstract

• The principle of the nanocrystals embedded high-k nonvolatile memory device has been reviewed. The high-k stack could be fabricated with a simple and low cost one pumpdown sputtering method followed by rapid thermal annealing. The memory function of the device is controlled by material properties of the high-k and the embedded nanocrystal. Factors influencing the type of trapped charges, the charge trapping capacity, and reliability with respect to operation parameters and environment are discussed. This kind of device is potentially important for high density and highly reliable electronic products.

authors

• Kuo, Yue

published proceedings

• NANOCRYSTAL EMBEDDED DIELECTRICS FOR ELECTRONIC AND PHOTONIC DEVICES

author list (cited authors)

• Kuo, Y.

citation count

• 3

complete list of authors

• Kuo, Yue

publication date

• May 2013

publisher

• The Electrochemical Society  Publisher

published in

• ECS Transactions  Journal

keywords

• Neurodegenerative

Digital Object Identifier (DOI)

• 10.1149/05304.0121ecst

International Standard Book Number (ISBN) 13

• 978-1-62332-026-3

start page

• 121

end page

• 128

volume

• 53

issue

• 4

URL

• http%3A%2F%2Fdx.doi.org%2F10.1149%2F05304.0121ecst