Charge trapping sites in nc-RuO embedded ZrHfO high-K nonvolatile memories
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Materials and electrical properties of the MOS capacitor containing nc-RuO embedded in the high-k dielectric ZrHfO film have been studied. The electron- and hole-trapping capacities and trapping sites in this kind of device were investigated using the constant voltage stress method, the frequency-dependent C-V measurement, and the retention characteristics. The negligible charge trapping phenomenon in the non-embedded device rules out the possibility of any trapping site in the bulk ZrHfO film or at the Si/ZrHfO interface. The electrical characterization results suggest that electrons are trapped in the bulk nc-RuO. However, holes have two possible trapping sites, i.e., in the bulk nc-RuO or at the nc-RuO/ZrHfO interface. © 2010 Materials Research Society.
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