Dielectric relaxation and breakdown detection of doped tantalum oxide high-k thin films
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While TaOx, HfOx, ZrOx, Hf-doped TaO x, and Zr-doped TaOx thin films are promising high-k gate dielectric candidates, their intrinsic reliability has not yet been investigated. In this paper, the authors examine some fundamental reliability aspects of these high-k films through ramp voltage stress testing. By studying dielectric relaxation and analyzing the transient conductivity, the breakdown mode of the tested high-k film is identified; a sensitive method of breakdown detection in ramped voltage tests is proposed and investigated.
IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY
author list (cited authors)
Luo, W., Kuo, Y., & Kuo, W.
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