Dielectric relaxation and breakdown detection of doped tantalum oxide high-k thin films

abstract

• While TaOx, HfOx, ZrOx, Hf-doped TaO x, and Zr-doped TaOx thin films are promising high-k gate dielectric candidates, their intrinsic reliability has not yet been investigated. In this paper, the authors examine some fundamental reliability aspects of these high-k films through ramp voltage stress testing. By studying dielectric relaxation and analyzing the transient conductivity, the breakdown mode of the tested high-k film is identified; a sensitive method of breakdown detection in ramped voltage tests is proposed and investigated.

authors

• Kuo, Yue
• Luo, Wen

published proceedings

• IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY

author list (cited authors)

• Luo, W., Kuo, Y., & Kuo, W.

citation count

• 38

complete list of authors

• Luo, W||Kuo, Y||Kuo, W

publication date

• September 2004

publisher

• Institute of Electrical and Electronics Engineers (IEEE)  Publisher

published in

• IEEE Transactions on Device and Materials Reliability  Journal

keywords

• Dielectric Relaxation
• High-k Dielectric
• Thin Film Breakdown

Digital Object Identifier (DOI)

• 10.1109/TDMR.2004.836161

start page

• 488

end page

• 494

volume

• 4

issue

• 3

URL

• http%3A%2F%2Fdx.doi.org%2F10.1109%2Ftdmr.2004.836161