Dielectric Relaxation and Breakdown Detection of Doped Tantalum Oxide High-k Thin Films Academic Article uri icon

abstract

  • While TaOx, HfOx, ZrOx, Hf-doped TaO x, and Zr-doped TaOx thin films are promising high-k gate dielectric candidates, their intrinsic reliability has not yet been investigated. In this paper, the authors examine some fundamental reliability aspects of these high-k films through ramp voltage stress testing. By studying dielectric relaxation and analyzing the transient conductivity, the breakdown mode of the tested high-k film is identified; a sensitive method of breakdown detection in ramped voltage tests is proposed and investigated.

published proceedings

  • IEEE Transactions on Device and Materials Reliability

author list (cited authors)

  • Luo, W., Kuo, Y., & Kuo, W.

citation count

  • 36

complete list of authors

  • Luo, W||Kuo, Y||Kuo, W

publication date

  • September 2004