Light Emission Enhancement by Embedding Nanocrystalline Cadmium Selenide in Amorphous ZrHfO High-k Dielectric Thin Film Deposited on Silicon Wafer Academic Article

abstract

• The Author(s) 2015. The enhancement of white light emission from the amorphous Zr-doped HfO2 film on the p-type silicon wafer with the embedDing of a nanocrystalline cadmium selenide layer has been studied through understanDing characteristics of the emitted light, leakage current, surface topography, driving methods and time. All changes of the emission characteristics can be explained with the formation and thermal excitation of the conductive paths. The deterioration of the light emission process over a long period of 5,664 hours has also been investigated and discussed. There are many potential applications of this kind of light emitting device.

authors

• Kuo, Yue

published proceedings

• ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY

author list (cited authors)

• Lin, C., & Kuo, Y.

citation count

• 2

complete list of authors

• Lin, Chi-Chou||Kuo, Yue

publication date

• January 2016

publisher

• The Electrochemical Society  Publisher

published in

• ECS Journal of Solid State Science and Technology  Journal

keywords

• 34 Chemical Sciences
• 3406 Physical Chemistry
• 51 Physical Sciences
• 5104 Condensed Matter Physics

Digital Object Identifier (DOI)

• 10.1149/2.0381602jss

start page

• Q75

end page

• Q80

volume

• 5

issue

• 3

URL

• http%3A%2F%2Fdx.doi.org%2F10.1149%2F2.0381602jss