- The Author(s) 2015. The enhancement of white light emission from the amorphous Zr-doped HfO2 film on the p-type silicon wafer with the embedDing of a nanocrystalline cadmium selenide layer has been studied through understanDing characteristics of the emitted light, leakage current, surface topography, driving methods and time. All changes of the emission characteristics can be explained with the formation and thermal excitation of the conductive paths. The deterioration of the light emission process over a long period of 5,664 hours has also been investigated and discussed. There are many potential applications of this kind of light emitting device.