A Novel Hole-Based Memory Device Fabricated from Nano ITO Embedded High-k Thin Films Conference Paper uri icon

abstract

  • A new type of hole-based memory device composed of a novel indium tin oxide embedded zirconium-doped hafnium oxide high- k film has been fabricated and characterized. It has strong hole retention. When indium tin oxide is replaced with nanocrystalline silicons, it becomes an electron-based memory device. The new material can be used in high-performance nonvolatile memory devices. In principle, CMOS type nonvolatile memories can be fabricated using these two types of devices. 2006 IEEE.

name of conference

  • 2006 Sixth IEEE Conference on Nanotechnology

published proceedings

  • 2006 Sixth IEEE Conference on Nanotechnology

author list (cited authors)

  • Kuo, Y., Lu, J., Yan, J., & Lin, C.

citation count

  • 0

complete list of authors

  • Kuo, Yue||Lu, Jiang||Yan, Jiong||Lin, Chen-Han

publication date

  • January 2006