A Novel Hole-Based Memory Device Fabricated from Nano ITO Embedded High-k Thin Films Conference Paper

abstract

• A new type of hole-based memory device composed of a novel indium tin oxide embedded zirconium-doped hafnium oxide high- k film has been fabricated and characterized. It has strong hole retention. When indium tin oxide is replaced with nanocrystalline silicons, it becomes an electron-based memory device. The new material can be used in high-performance nonvolatile memory devices. In principle, CMOS type nonvolatile memories can be fabricated using these two types of devices. 2006 IEEE.

name of conference

• 2006 Sixth IEEE Conference on Nanotechnology

authors

• Kuo, Yue

published proceedings

• 2006 Sixth IEEE Conference on Nanotechnology

author list (cited authors)

• Kuo, Y., Lu, J., Yan, J., & Lin, C.

citation count

• 0

complete list of authors

• Kuo, Yue||Lu, Jiang||Yan, Jiong||Lin, Chen-Han

publication date

• January 2006

publisher

• Institute of Electrical and Electronics Engineers (IEEE)  Publisher

keywords

• 40 Engineering
• 4016 Materials Engineering
• 4018 Nanotechnology

Digital Object Identifier (DOI)

• 10.1109/nano.2006.247689

International Standard Book Number (ISBN) 10

• 1424400783

International Standard Book Number (ISBN) 13

• 9781424400782

start page

• 469

end page

• 472

volume

• 2

URL

• http://dx.doi.org/10.1109/nano.2006.247689