A novel hole-based memory device fabricated from nano ITO embedded high-k thin films Conference Paper uri icon

abstract

  • A new type of hole-based memory device composed of a novel indium tin oxide embedded zirconium-doped hafnium oxide high- k film has been fabricated and characterized. It has strong hole retention. When indium tin oxide is replaced with nanocrystalline silicons, it becomes an electron-based memory device. The new material can be used in high-performance nonvolatile memory devices. In principle, CMOS type nonvolatile memories can be fabricated using these two types of devices. © 2006 IEEE.

author list (cited authors)

  • Kuo, Y., Lu, J., Yan, J., & Lin, C. H.

publication date

  • December 2006