Control of Edge Shape, Sidewall Profile, and Sidewall Roughness of the Plasma Etched Copper
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A novel plasma-based, room-temperature copper etching method was reported recently. In this paper, the authors investigated the influence of process parameters on the edge shape, sidewall profile and the sidewall roughness of the etched copper patterns. The additive gas, such as CF4 and N 2, affects not only the etch rate but also the sidewall profile. With the proper plasma condition, such as power, pressure, and additive gas, copper lines with a vertical profile and smooth sidewall surface were obtained. copyright The Electrochemical Society.
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