Control of Edge Shape, Sidewall Profile, and Sidewall Roughness of the Plasma Etched Copper Conference Paper

abstract

• A novel plasma-based, room-temperature copper etching method was reported recently. In this paper, the authors investigated the influence of process parameters on the edge shape, sidewall profile and the sidewall roughness of the etched copper patterns. The additive gas, such as CF4 and N2, affects not only the etch rate but also the sidewall profile. With the proper plasma condition, such as power, pressure, and additive gas, copper lines with a vertical profile and smooth sidewall surface were obtained.

authors

• Kuo, Yue

published proceedings

• ECS Transactions

author list (cited authors)

• Kuo, Y., & Liu, G.

citation count

• 0

complete list of authors

• Kuo, Yue||Liu, Guojun

publication date

• July 2006

publisher

• The Electrochemical Society  Publisher

published in

• ECS Transactions  Journal

Digital Object Identifier (DOI)

• 10.1149/1.2218489

start page

• 169

end page

• 176

volume

• 1

issue

• 11

URL

• http%3A%2F%2Fdx.doi.org%2F10.1149%2F1.2218489