Reliability of nc-ZnO Embedded ZrHfO High-k Nonvolatile Memory Devices Stressed at High Temperatures Conference Paper uri icon

abstract

  • The nanocrystalline ZnO embedded Zr-doped HfO2 high-k dielectric has been made into MOS capacitors for nonvolatile memory studies. The device shows a large charge storage density, a large memory window, and a long charge retention time. In this paper, authors investigated the temperature effect on the reliability of this kind of device in the range of 25°C to 175°C. In addition to the trap-assisted conduction, the memory window and the breakdown strength decreased with the increase of the temperature. The high-k film's conductivity increased and the nc-ZnO's charge retention capability decreased with the increase of temperature. The nc-ZnO retained the trapped charges even after the high-k film broke down and eventually lost the charges at a higher voltage. The difference between these two voltages decreased with the increase of the temperature. © 2009 Materials Research Society.

author list (cited authors)

  • Yang, C., Kuo, Y., Lin, C., & Kuo, W.

publication date

  • December 2009