Reliability of nc-ZnO Embedded ZrHfO High-k Nonvolatile Memory Devices Stressed at High Temperatures Conference Paper

abstract

• The nanocrystalline ZnO embedded Zr-doped HfO2 high-k dielectric has been made into MOS capacitors for nonvolatile memory studies. The device shows a large charge storage density, a large memory window, and a long charge retention time. In this paper, authors investigated the temperature effect on the reliability of this kind of device in the range of 25C to 175C. In addition to the trap-assisted conduction, the memory window and the breakdown strength decreased with the increase of the temperature. The high-k film's conductivity increased and the nc-ZnO's charge retention capability decreased with the increase of temperature. The nc-ZnO retained the trapped charges even after the high-k film broke down and eventually lost the charges at a higher voltage. The difference between these two voltages decreased with the increase of the temperature. 2009 Materials Research Society.

authors

• Kuo, Yue

published proceedings

• MATERIALS AND PHYSICS FOR NONVOLATILE MEMORIES

author list (cited authors)

• Yang, C., Kuo, Y., Lin, C., & Kuo, W.

complete list of authors

• Yang, Chia-Han||Kuo, Yuc||Lin, Chen-Han||Kuo, Way

publication date

• December 2009

published in

• MRS Online Proceedings Library  Journal

International Standard Book Number (ISBN) 13

• 978-1-60511-133-9

start page

• 25

end page

• +

volume

• 1160