n-channel and p-channel a-Si : H thin-film transistors with copper electrodes

The n-channel and p-channel amorphous-silicon thin-film transistors (TFTs) with copper gate, source, and drain electrodes prepared by a novel plasma etching process have been fabricated and studied. Their transistor characteristics are similar to those of TFTs with molybdenum electrodes. The TFT reliability was examined with by two methods: extended high-temperature annealing, and gate-bias stress. No obvious interaction was observed between copper and gate dielectric; even there was no barrier between these films. Therefore, high-performance CMOS-type a-Si:H TFTs with highly conductive copper electrodes and interconnect lines can be fabricated with this new plasma etching method.

n-channel and p-channel a-Si : H thin-film transistors with copper electrodes Conference Paper