Hysteresis of Transfer Characteristics of Floating-Gate a-Si:H Thin Film Transistor Nonvolatile Memories Academic Article

abstract

• The mechanism controlling the memory function of the floating-gate amorphous silicon thin film transistor, i.e., the hysteresis behavior of the transfer characteristics, has been identified. The magnitudes of the forward and backward gate voltages determine the charge trapping and detrapping processes including the curve of the transfer characteristics, the hysteresis direction, and the memory window. The thickness of the channel-contact layer also controls the charge transport distance and the memory function. The memory window can be well defined and optimized by avoiding excessive trapping of holes and enhancing the trap of electrons. 2010 The Electrochemical Society.

authors

• Kuo, Yue

published proceedings

• ELECTROCHEMICAL AND SOLID STATE LETTERS

author list (cited authors)

• Kuo, Y.

citation count

• 2

complete list of authors

• Kuo, Yue

publication date

• October 2010

publisher

• The Electrochemical Society  Publisher

published in

• ECS Electrochemistry Letters  Journal

keywords

• 40 Engineering
• 4016 Materials Engineering
• 4018 Nanotechnology

Digital Object Identifier (DOI)

• 10.1149/1.3487929

start page

• H460

end page

• H463

volume

• 13

issue

• 12

URL

• http%3A%2F%2Fdx.doi.org%2F10.1149%2F1.3487929