publication venue for
- Memory Functions of Molybdenum Oxide Nanodots-Embedded ZrHfO High-k. 15:H192-H194. 2012
- Temperature Influence on Nanocrystals Embedded High-k Nonvolatile C-V Characteristics. 14:II50-II52. 2011
- Hysteresis of Transfer Characteristics of Floating-Gate a-Si:H Thin Film Transistor Nonvolatile Memories. 13:H460-H463. 2010
- Nonvolatile Memories with Dual-Layer Nanocrystalline ZnO Embedded Zr-Doped HfO2 High-k Dielectric. 13:H83-H86. 2010
- Memory functions of amorphous silicon-based floating gate MIS capacitors. 10:H232-H234. 2007
- Zirconium-doped hafnium oxide high-k dielectrics with subnanometer equivalent oxide thickness by reactive sputtering. 10:H199-H202. 2007
- Integration of an amorphous silicon thin film transistor with a microchannel electrophoresis for protein identification. 9:J21-J23. 2006
- Hydrogenation Effect on the Er Luminescence in Amorphous Silicon Quantum Dot Films. 8:g63-g64. 2005
- Suppression of crystallization of tantalum oxide thin film by doping with zirconium. 8:G27-G29. 2005
- UPS of boron-sulfur Co-doped, n-type diamond. 7:G331-G334. 2004
- Stability of Ultrashallow Junction Formed by Low-Energy Boron Implant and Spike Annealing Problem and Solution. 6:g82-g84. 2003
- Microchannel electrophoresis device for separation and in situ detection of proteins. 4:H23-H25. 2001
- Point Defect Engineering and Its Application in Shallow Junction Formation. 5:g93-g95.
- Selective detection of Hg (II) ions from Cu(II) and Pb(II) using AlGaN/GaN high electron mobility transistors. 10:J150-J153.