Temperature Influence on Nanocrystals Embedded High-k Nonvolatile C-V Characteristics uri icon

abstract

  • The temperature influence on memory functions of the nanocrystalline ZnO embedded Zr-doped Hf O2high-k capacitor was investigated. Both the memory window and the trapped charge density increased with the increase of temperature. The temperature effect on hole trapping was observed at 125C, but not at 25 or 75C. The temperature effect on electron trapping was obvious above 25C. The interface quality is greatly influenced by the temperature, which was detected on the leakage current density-gate voltage, capacitance-voltage (C-V), and conductance-gate voltage curves. The sample temperature affects the carrier generation and transport mechanisms, which are responsible for the memory function changes. 2010 The Electrochemical Society.

published proceedings

  • ELECTROCHEMICAL AND SOLID STATE LETTERS

author list (cited authors)

  • Yang, C., Kuo, Y., Lin, C., & Kuo, W.

citation count

  • 9

complete list of authors

  • Yang, Chia-Han||Kuo, Yue||Lin, Chen-Han||Kuo, Way

publication date

  • January 2011