Memory functions of amorphous silicon-based floating gate MIS capacitors Academic Article

abstract

• Amorphous silicon metal insulator semiconductor (MIS) capacitor, which includes an amorphous silicon thin film embedded in the silicon nitride gate dielectric stack, has been prepared and characterized for memory functions. The capacitor's current-voltage and capacitance-voltage hysteresis curves showed strong charge trapping and detrapping phenomena. The embedded amorphous silicon film enhanced charge retention in the dielectric film. The 9 nm embedded a-Si:H layer had a charge storage capacity six times that of the capacitor without the embedded layer. This kind of nonvolatile memory device can be used in many low-temperature circuits. 2007 The Electrochemical Society.

authors

• Kuo, Yue

published proceedings

• ELECTROCHEMICAL AND SOLID STATE LETTERS

author list (cited authors)

• Nominanda, H., & Kuo, Y.

citation count

• 3

complete list of authors

• Nominanda, Helinda||Kuo, Yue

publication date

• June 2007

publisher

• The Electrochemical Society  Publisher

published in

• ECS Electrochemistry Letters  Journal

keywords

• 40 Engineering
• 4016 Materials Engineering

Digital Object Identifier (DOI)

• 10.1149/1.2746126

start page

• H232

end page

• H234

volume

• 10

issue

• 8

URL

• http%3A%2F%2Fdx.doi.org%2F10.1149%2F1.2746126