Stability of Ultrashallow Junction Formed by Low-Energy Boron Implant and Spike Annealing Problem and Solution
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Dopant stabilization after high-temperature thermal spike annealing was investigated, 0.2 keV B implanted silicon wafers were thermally spike-annealed at 1100C, followed by furnace annealing between 550 and 750C to study their stabilities. We have observed the anomalous diffusion of boron during the post-spike furnace annealing in nitrogen ambient. It is indicated that p+/n junctions formed by ultralow energy B implant and spike annealing are not stable during subsequent thermal processes. By adding a megaelectronvolt (MeV) implantation after spike annealing, the B profile shows a negligible diffusion during the following furnace annealing at 750C. The concept of MeV implantation can be used as a method to overcome instability of the shallow junction.
Electrochemical and Solid-State Letters
author list (cited authors)
Shao, L., Wang, X., Chen, H., Liu, J., Bennett, J., Larsen, L., & Chu, W.
complete list of authors
Shao, Lin||Wang, Xuemei||Chen, Hui||Liu, Jiarui||Bennett, Joe||Larsen, Larry||Chu, Wei-Kan