Memory Functions of Molybdenum Oxide Nanodots-Embedded ZrHfO High-k Academic Article

abstract

• A floating-gate capacitor memory device containing nanocrystalline MoO x embedded ZrHfO high-k gate dielectric has been fabricated and studied for the nonvolatile memory properties. The charge trapping capacity and trapping site were investigated with the capacitance-voltage measurements. The memory functions were mainly contributed by the hole-trapping mechanism. The leakage current-voltage curve was consistent with the above result and showed the coulomb blockade effect. From the extrapolation of the charge retention data, this device could retain more than 50 of trapped charges over 10 years. This is a potentially feasible dielectric structure for future nanosize nonvolatile memories. 2012 The Electrochemical Society.

authors

• Kuo, Yue

published proceedings

• ELECTROCHEMICAL AND SOLID STATE LETTERS

author list (cited authors)

• Liu, X. i., Yang, C., Kuo, Y., & Yuan, T.

citation count

• 6

complete list of authors

• Liu, Xi||Yang, Chia-Han||Kuo, Yue||Yuan, Tao

publication date

• May 2012

publisher

• The Electrochemical Society  Publisher

published in

• ECS Electrochemistry Letters  Journal

keywords

• 40 Engineering
• 4018 Nanotechnology
• Neurosciences

Digital Object Identifier (DOI)

• 10.1149/2.020206esl

start page

• H192

end page

• H194

volume

• 15

issue

• 6

URL

• http%3A%2F%2Fdx.doi.org%2F10.1149%2F2.020206esl